features low on-resistance. built-in g-s protection diode. small and surface mount package. power switching, dc / dc converter. absolute maximum ratings ta = 25 parameter symbol n-channel p-channel unit drain-source voltage v dss 30 -30 v gate-source voltage v gss 20 20 v drain current continuous i d 7.0 4.5 a drain current pulsed * i dp 28 18 a source current (body diode) continuous i s 1.6 -1.6 a source current (body diode) pulsed * i sp 6.4 -18 a total power dissipation (t c =25 ) p d w channel temperature t ch storage temperature t stg channel to ambient r th (ch-a) /w *pw 10 s, duty cycle 1% 2 150 -55to+150 62.5 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type ic smd type ic KP8M10 smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification
smd type ic smd type ic electrical characteristics ta = 25 parameter symbol min typ max unit v gs = 20v,v ds =0v n-ch 10 v gs = 20v,v ds =0v p-ch 10 i d =1ma,v gs =0v n-ch 30 i d =-1ma,v gs =0v p-ch -30 v ds =30v,v gs =0v n-ch 1 v ds =-30v,v gs =0v p-ch -1 v ds =10v,i d =1ma n-ch 1.0 2.5 v ds =-10v,i d =-1ma p-ch -1.0 -2.5 i d =7.0a,v gs =10a 17 24 i d =7.0a,v gs =4.5v 23 33 i d =7.0a,v gs =4v 25 35 i d =-4.5a,v gs =-10a 40 56 i d =-4.5a,v gs =-4.5v 57 80 i d =-4.5a,v gs =-4.0v 65 90 i d =7.0a,v ds =10v n-ch 5.0 i d =-4.5a,v ds =-10v p-ch 3.5 n-channel n-ch 600 v ds =10v,v gs =0v,f=1mhz p-ch 850 n-ch 200 p-channel p-ch 190 v ds =-10v,v gs =0v,f=1mhz n-ch 120 p-ch 120 i d =3.5a,v dd =15v n-ch 8 i d =-2.5a,v dd =-15v p-ch 10 n-channel n-ch 10 v gs =10v,r l =4.29 ,r g =10 p-ch 25 n-ch 37 p-channel p-ch 60 v gs =-10v,r l =6.0 ,r g =10 n-ch 11 p-ch 25 n-channel n-ch 8.4 11.8 v dd =15v,v gs =5v,i d =7.0a p-ch 8.5 n-ch 1.9 p-channel p-ch 2.5 v dd =-15v,v gs =-5v,i d =-4.5a n-ch 3.3 p-ch 3.0 i s =6.4a, v gs =0v n-ch 1.2 i s =-1.6a, v gs =0v p-ch -1.2 i dss zero gate voltage drain current v gs (th) i gss gate-source leakage v (br) dss drain-source breakdown voltage gate threshold voltage pf pf r ds (on) static drain-source on-state resistance |y fs | forward transfer admittance c oss output capacitance m input capacitance t d (on) turn-on delay time tr rise time fall time q g total gate charge r ds (on) static drain-source on-state resistance t d (off) turn-off delay time c rss reverse transfer capacitance c iss v sd forward voltage testconditons n-ch p-ch q gs gate-source charge q gd gate-drain charge t f m s a v a v pf ns v nc nc nc ns ns ns KP8M10 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification
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